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This paper presents a design for 1–6 GHz low noise amplifier (LNA) based on cascade GaN HEMTs with LC ladder input matching and stabilizing output impedance. The designed LNA is simulated using Advanced Design Software (ADS) based on a commercial packaged transistor from Cree Inc. The LNA shows a maximum noise figure of 2.95 dB in the 1–6 GHz range with a gain of 14 dB. It also has a maximum S 11...
In this paper, a distributed amplifier (DA) with a feed forward path is presented to reduce noise effects of input matching termination at the output. The proposed active termination (AT) technique also improves the amplifier gain without increasing its power consumption. To validate the introduced method, a four-stage wideband actively terminated DA (ATDA) is designed in a 0.18μm CMOS technology...
A low noise amplifier (LNA) is implemented in this work for ultra wide band (UWB) localization and sensing systems within a wide frequency range starting from 400MHz and up to 10GHz. The topology used is a resistive shunt feedback and a peaking inductance in series with the output transistor to achieve the desired bandwidth and have better noise performance. The LNA is fabricated in low cost 0.25µm...
A low noise amplifier (LNA) for ultra-wideband (UWB) applications is presented using active impedance matching technique for efficient wideband input and output matching. Active impedance matching eliminates the use of lossy and area consuming matching network which, in turn, reduce noise figure, power consumption and chip area. The LNA achieves a -3 dB bandwidth of 2-13 GHz with a maximum gain of...
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