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We studied the relationship between the resistive-switching properties of the Pr0.7Ca0.3MnO3 (PCMO) thin-film elements and their geometry dimensions below submicrometers. Our electrical test results of a series of PCMO-based resistive-switching devices with different sizes show that switching voltages of ±2.5 V were achieved by reducing the PCMO layer thickness to 30 nm. In addition, the reduction...
Since the very beginning of the flash memory era, the market has been dominated by the floating gate technology. However, as floating gate flash continues along a very steep scaling path, more and more barriers start to appear, limiting further scaling possibilities of the technology. At the same time, other concepts are preparing to take over. This paper concentrates on the prospect of high-k materials...
In silicon integrated circuit technology, ferroelectric thin films have been importantly studied since they are the most promising materials for future non-volatile memory devices due to their fast switching speed and long-term retention time. PbTiO3 (PTO) is the one of the most suitable material for non-volatile memory devices, because it has the highest spontaneous polarization (PS) value. The subject...
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