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We propose a method to generate spherical micro-mirror by anodic bonding. A flat silicon plate is bent with fulcrum to form a spherical shape by anodic bonding. Convex spherical surface is generated inside the fulcrum by the bending moment generated in circumference of micro-mirror. Due to the bent surface of silicon plate, a smooth spherical surface is obtained. The focal length is in the range form...
There are a number of emerging technologies such as metamaterials, photonic wave-guides, nano-imprint lithography (NIL), field emission devices and through silicon via (TSV), that require high resolution and high aspect ratio nanofabrication techniques for good performance. Unfortunately, current nanofabrication techniques, including photolithography and e-beam lithography, are limited to low aspect...
We have improved in-plane uniformity of crystal shape for InGaAs micro-discs using a multi-step growth in micro-channel selective-area metal-organic vapor phase epitaxy on Si(111) substrates. The multi-step growth employs a gas flow sequence in which the partial pressure of a Ga source is modulated to control the initial nucleation and the growth mode. At the initial stage of growth, we grew InAs...
We report the growth and the micro-photoluminescence (mu-PL) study of Si-doped GaAs nanoneedles (NNs) grown on Si substrates by MOCVD. NN shape was not affected by the addition of Si dopants. The mu-PL peak wavelength was found redshifted with increasing disilane doping flow rate indicating bandgap narrowing. The mu-PL peak intensity was also higher as doping flow rate increased.
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
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