The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report on the epitaxial growth, fabrication, and characterization of full-color InGaN/GaN dot-in-a-wire nanoscale LEDs on Si(111), which can exhibit an internal quantum efficiency of ~ 45% and negligible saturation up to ~ 300 A/cm2.
We have developed a periodical self-assembled method of patterning the sapphire substrate with silica nanospheres for light-emitting diode (LED) applications. Using this method, silica nanospheres were directed to self-assemble in a periodic fashion on a wet-etched patterned sapphire substrate (WPSS). Moreover, we fabricated an InGaN/GaN-based LED on the silica-nanosphere-assembled WPSS. The light...
Recently, AlGaInP-based light emitting diodes (LEDs) have experienced an impressive evolution in both device performance and market volume. However, development of new applications is required in order to realize their full potential in areas such as use as a light source for auto focusing in digital cameras, special illumination for particular functions in agriculture, and in full color displays...
AlGaN based deep ultraviolet light emitting diodes (DUV LEDs) are key components in systems for air, water, and food purification and germicidal applications. Because of the heteroepitaxial growth of the DUV LED epilayers on sapphire, they have a large number of dislocations that invariably leads to a reduction of quantum efficiency and lifetime degradation. In this paper, we present our recent work...
We demonstrated the first semipolar Ill-nitride green LED grown on c-plane sapphire substrates. The emission wavelength under CW current injection was 543 nm and showed negligible quantum confined Stark effect.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.