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InGaN-based light emitting diodes (LEDs) were embedded by an insulated disk-array gallium oxide (Ga2O3) pattern structure that was formed through a photoelectrochemical oxidation process on a GaN layer. A 4-μm-diameter native Ga2O3 pattern with a top air-void structure was observed in the lower undoped GaN layer acting as a lateral overgrowth mask and as a light scattering center. In the patterned-Ga...
In this study, we have investigated the high-temperature electro-optical degradation of DC-Aged InGaN based high power GaN LEDs. For this purpose, we fabricated large size blue InGaN/GaN LED chips (1mm??1mm) by using standard LED fabrication processes, where the ITO and Cr/Au served as p-type ohmic contact and n-ohmic contact layer, respectively.
A mid-infrared optical upconverter fabricated by using wafer fusion technology is reported. The device integrates an InAsSb/GaSb photodetector with a GaAs/AlGaAs light emitting diode. Mid-infrared to near infrared optical upconversion was demonstrated with an external upconversion efficiency of 0.06 W/W at 200 K - a temperature attainable with a thermoelectric cooler.
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