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InGaN-based light emitting diodes (LEDs) were embedded by an insulated disk-array gallium oxide (Ga2O3) pattern structure that was formed through a photoelectrochemical oxidation process on a GaN layer. A 4-μm-diameter native Ga2O3 pattern with a top air-void structure was observed in the lower undoped GaN layer acting as a lateral overgrowth mask and as a light scattering center. In the patterned-Ga...
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