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Accumulation-mode MOS varactors (AMOSVs) are considered for use in THz frequency multipliers. The superior modulation ratios and lower series loss relative to silicon Schottky diodes for a 130-nm CMOS technology are highlighted. Dynamic cutoff frequencies in excess of 1-THz are predicted. AMOSV potential for 10-dB loss, 600-GHz doublers is discussed as is an integrated 100-GHz doubler design.
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