The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Here we report the impact of source/drain contact resistance on the dynamic characteristics of large area Graphene Field Effect Transistor (GFET). Although silicon has been the most widely used semiconductor in the channel of MOSFETs, it is approaching to its physical limits. On the other hand, graphene has been deeply studied as a potential alternative; however its zero band gap forbids the applicability...
In this paper we propose a theoretical and experimental study of the nature of metal-graphene contacts. We use ab-initio simulations and semi-analytical modeling to derive and validate a simple two-parameter model of metal-graphene contacts. Such findings are supported by experimental results for large samples of different types of metal-graphene contacts.
Failure analysis of electronic components is becoming more and more important in recent years. Converters often fail after a period of storage, e.g. the failure mode of 782# caused by parameter changes in integral nonlinearity and differential nonlinearity. This paper analyzes an abnormal condition of a 10bit D/A converter and introduces an effective analysis process to this mode. First, ESD reason...
In this study we have measured and analyzed characteristics of real transistors on dynamic random access memories (DRAM) including cell transistor by using nano-probing system for improved failure analysis. Measuring results of the conventional pad probing and nano-probing were compared on test element group (TEG) patterns of large transistors. The transistor characteristics of nano-probing results...
The difference in the number of contacts across different transistors and standard cells results in current variations across the channel. In this work, we present test structures to target this effect and characterize and quantify the impact on 45 nm SOI silicon. After comparing the impact of contact resistance between 65 nm and 45 nm silicon, we provide and analyze our 45 nm test structure results...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.