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Low-cost, low-power, and high-sensitivity System-on-Chip (SoC) Hall Effect sensors for 0.18μm and 0.13μm technologies and beyond are developed in this work. A best-inclass current-related sensitivity Si of 418 V/A∗T is achieved by a Hall device with an area of 42 μm × 42 μm. Small offset voltage ranges within +/−1.05 mV, as well as excellent sensor reliability, are demonstrated. The Hall sensors are...
Physical parameters of a photovoltaic cell can be determined from its experimental current-voltage characteristic. The accurate determination of these parameters is particularly dependent on experimental measurements conditions. The reliability of measurements of temperature variations and intensity of solar radiation are dependent on the sampling time of the measurements. Controlling the radiation...
4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range −30°C to 150°C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart are compared and explained. A physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER. The influences of the geometry (short channel effects), channel mobility,...
The electrical properties of n+-Si/n-GaN junctions by room-temperature bonding were investigated. The n+-Si/n-GaN junctions exhibited linear current-voltage characteristics.
We applied the low-temperature bounding for fabricating base/collector junctions of Si-based bipolar transistor structures. The common-base current gain of fabricated bipolar transistors increased as the ambient temperature was raised up to 165°C, which suggests that the low-temperature bounding might be useful for fabricating high-performance heterojunction devices.
We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of...
This paper provides an analysis of the irradiance influence on photovoltaic cell efficiency in dependence on the cell construction, using the standard equivalent circuit describing solar cell. The influence of the series resistance is discussed in details and results of simulations are completed with experimental result obtained by measuring crystalline silicon solar cells and in broad intervals of...
Photovoltaic array is the base of the photovoltaic power system. To use the PV battery array efficiently and properly and to protect it, it is important to build an accurate Photovoltaic array model and to analyze the characteristics of the PV array under different circumstances. The characteristics of mono-crystalline silicon, poly-crystalline silicon and amorphous silicon PV modules' basic electrical...
GaTeSb materials possess excellent phase change properties comparable to conventional GeSbTe-based PCM systems. GaTeSb-based quaternary systems are engineered and evaluated as thin film methodologically using x-ray diffraction, isothermal and non-isothermal calculation of activation energies, differential thermal analysis, followed by device characterization on electrical performances, endurance and...
In this paper, a novel VOx thermosensitive thin film is fabricated for microbolometer arrays. By adjusting the fabricating process parameters, some key thermoelectrical properties of the thin film can be well controlled. The designed and fabricated VOx thin film in our laboratory has excellent thermosensitive characteristics for infrared, and its temperature coefficient of resistance (TCR) value reaches...
An approach is proposed to calculate parameters of solar cells in the paper, which is based on the derivation of equivalent model and some standard parameters provided by manufacturers. And the influence of variation of the solar radiation and temperature on parameters is taken into account with the additional compensation parameters. According to the comparison between theoretic computing datum and...
This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited using the atmospheric pressure chemical vapor deposition (APCVD) method at 1200°C using the single-precursor hexamethyldisilane Si2(CH3)6 (HMDS) as the Si and C precursors. 0~40 seem N2 gas was used as the doping source. A...
In this paper, a micro vacuum pirani gauge made of single crystal silicon has been developed and its temperature and DC current response properties in different pressures were firstly studied detailedly. The resistance of it increases with the temperature exponentially. There is a current threshold resulting from the materials characteristics and the precision of the instrument at low pressure. And...
Au/IrO2/Si heterostructures were built. Their DC current versus temperature characteristics were experimentally obtained to get the corresponding Richardson plots. From these plots, the Richardson constant was estimated for these devices. Then, from the current-voltage plots at room temperature the series resistance, ideality factor and barrier height were obtained by applying the method proposed...
This work is about the development of a temperature-dependent driving strategy for power transistors, aimed at counterbalancing temperature related increases in their on-state resistance and power losses by a corresponding increase of the amplitude of the applied driving signal. The concept is first demonstrated on the example of a PowerMOSFET, based on semiconductor theory and circuit simulations...
Power devices fabricated in 4H-SiC are poised to significantly impact the field of power electronics. There has been great interest in SiC as a material in which to fabricate power electronic devices for quite some time based on its very promising fundamental materials properties. However, it has been far more recently that the potential of SiC is being appreciated as a result of the recent advances...
The ruggedness of SiC pn diode was investigated. The SiC pn diode was confirmed to operate at over 800°C, a higher temperature than Si device's destruction temperature, and to endure a large current of over 1000A (2000A/cm2) per one chip. The resistance of the diode showed a positive temperature coefficient until its destruction. This was different from the destruction of Si pn diodes.
Vertical In0.53Ga0.47As tunnel field effect transistors (TFETs) with 100nm channel length and high-k/metal gate stack are demonstrated with high Ion/Ioff ratio (>104). At VDS = 0.75V, a record on-current of 20??A/??m is achieved due to higher tunneling rate in narrow tunnel gap In0.53Ga0.47As. The TFETs exhibit gate bias dependent NDR characteristics at room temperature under forward bias confirming...
Electrical performance of a light-induced degraded amorphous thin film (a-Si:H) module was investigated at various recovery temperature ranging from 25 to 65??C. Fill factor (FF) was proposed to describe the module performance due to its sensitivity to the resistance characteristics of module and environment parameters. The ground state of the a-Si:H module was 59.1% in fill factor, while an exponential...
Control of reliability is a major economic and technical challenge for power electronics. Today, models can be used to predict failure, but to be accurate this models should be updated continuously by the real mechanical state of the device. A possible solution is to make use of the silicon piezoresistive properties of MOS gated power devices (LDMOS, VDMOS, ...) and to take advantage, without increasing...
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