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IR Drop turned into a significant problem due to faster switching frequencies and device density through power distribution network. In a backend design flow, Power Delivery Networks are drawn at initial stages. The Power delivery improvement techniques available are applicable at PNR stages and less at ECO i.e. Post routing stages. Also, Power delivery improvement techniques generally widen the stripes...
In this paper, we review the conditions at which FinFETs could meet system requirements at the 7nm node. We explore the key enablers to meet the power performance targets for 7nm node. We show that the device parasitics is the biggest performance detractor as we scale down. We illustrate the device design space that allows to meet speed and power targets, then explore the optimization of the geometry...
Newest manufacturing technologies with feature sizes smaller than 20nm and FinFET devices have favored more restrictive design rules for manufacturability while suffering from electrical limitations of electromigration (EM) and variability. Designers can no longer reap the benefits in power, performance and area by simply relying on feature size miniature with contemporary design techniques. This...
Design-Technology co-optimization becomes a key knob to enable CMOS scaling. In this work we evaluate the technology options including lithography options as well as device options that are considered to enable N10 scaling by exploring their impact on representative designs such as standard cells, SRAM and analog contexts. This paper illustrates that the design angle needs to be considered early in...
Small EM voids in 30nm wide polycrystalline Cu lines which are formed earlier than full voids are characterized using local sense EM test structure. The growth of these initial voids is stopped after a rapid 1–10 Ohm resistance increase. The void mechanism follows a proposed model of polycrystalline Cu grain depletion. It is also shown that by detecting the initial voids, simple and cost effective...
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