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A new joint research project (JRP) integrating metrology institutes and universities from nine countries is aimed at realization of a new generation of standards for quantum resistance metrology. The project exploits graphene's properties to simplify operation of standards without compromising the unprecedented precision delivered by semiconductor quantum Hall devices. Higher operating temperatures...
This paper describes the development of a thermally regulated enclosure for standard resistor elements. The design, using a Peltier element, can work in a wide range of possible laboratory temperatures, with mK stability. Combined with a high quality resistance element, a robust working standard with 10−9 level relative stability is produced.
This paper describes realization in Poland of new system for resistance unit transfer from 10 kΩ to 100 TΩ, based on Hamon transfers. The new design of those transfers and their properties has been presented. Currently this system is being tested in Central Office of Measures in Poland.
This paper describes concepts and measurement techniques necessary for characterization of graphene in the development of graphene-based quantized Hall effect (QHE) devices and resistance standards. We briefly contrast the properties of graphene produced by three common processing methods and discuss the conditions necessary for well-developed resistance plateaus to be observed. Methods used to determine...
In this work we present precision measurements of the integer quantum Hall effect in exfoliated graphene on GaAs substrate. In a relatively large graphene Hall bar area (150 µm long and 30 µm wide) dissipationless quantum Hall state was maintained up to about 10 µA and Hall resistance revealed plateau quantization with an accuracy of a few parts per billion. This demonstrates the perspectives for...
Sixport calibration set is discussed in the paper. The used calibration method is mentioned, standard calibration sets are presented with their parameters and from them the electronic calibration set is developed. Schematics with real measured values of S11 are shown and obtained results are discussed.
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