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Large scale single-crystalline graphene was achieved on copper foils with CH4 as the precursor with a sandwich method. With a PMMA-assisted method, single-crystalline graphene was transferred to the marked SiO2/Si substrate. Quantum Hall devices will be fabricated by E-beam lithography and metallization. And, quantum Hall effect will be measured.
Recently a novel microscale Hall effect measurement technique has been developed to extract sheet resistance (Rs), Hall sheet carrier density (NHs) and Hall mobility (μH) from collinear micro 4-point probe measurements in the vicinity of an insulating boundary [1]. The technique measures in less than a minute directly the local transport properties, which enables in-line production monitoring on scribe...
This paper describes concepts and measurement techniques necessary for characterization of graphene in the development of graphene-based quantized Hall effect (QHE) devices and resistance standards. We briefly contrast the properties of graphene produced by three common processing methods and discuss the conditions necessary for well-developed resistance plateaus to be observed. Methods used to determine...
In this work we present precision measurements of the integer quantum Hall effect in exfoliated graphene on GaAs substrate. In a relatively large graphene Hall bar area (150 µm long and 30 µm wide) dissipationless quantum Hall state was maintained up to about 10 µA and Hall resistance revealed plateau quantization with an accuracy of a few parts per billion. This demonstrates the perspectives for...
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