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Copper direct bonding is one of the most promising approaches for three dimensional integrated circuits (3D IC). This process has reached a maturity already reported in publications for wafer to wafer and die to wafer stacking. Anyway, its reliability has to be demonstrated. In this paper Electromigration (EM) and Stress Induced Voiding (SIV) tests are also performed on 200°C bonded daisy chains to...
This paper discusses the influences of various underfills and adhesives on board-level bend performance of ChipArray® Thin Core Ball Grid Array (CTBGA) assemblies through an the monotonic three-point bending test. It is found that the bonding materials do enhance the bend performance for all the test categories as compared with the control assemblies which are without bonding materials, but the degrees...
The results of bonding and stress testing of Cu/Sn-Cu bonded dice and Cu-Cu thermocompression bonded dice at 10µm and 15µm pitch in large area arrays are shown. The interconnect bonding process pressure and temperature required for the formation of low resistance (<100 mΩ), high yielding (99.99% individual bond yield), and reliable interconnects is described. In the case of Cu/Sn-Cu, use of a mechanical...
A reliability evaluation of a 300-mm-compatible 3DI process is presented. The structure has tungsten through-Si-vias (TSVs), a hybrid Cu/adhesive bonding interface, and a post Si-thinning Cu BEOL. The interface bonding strength, deep thermal cycles test, temperature and humidity test, and ambient permeation oxidation all show favorable results, indicating the suitability of this technology for VLSI...
In the semiconductor industry to increase the power density, improve the electrical performances and optimize the robustness in the application, more and more key roles are covered by back-end processes and in particular by bonding technology used to connect power silicon chip and metallic leadframe that for Power devices is one of more impacting process. The performed studies, evaluations and production...
Deformation of Bi2Te3-based materials was performed. The source disks with nominal compositions of (Bi0.25Sb0.75)2Te3, (Bi0.25Sb0.75)2(Te0.95Se0.05)3 and (Bi0.90Sb0.10)2(Te0.95Se0.05)3 were cut from the ingots grown by the vertical Bridgman method (VBM). The disks were deformed by either cold press (CP) or pressure current heating (PCH). The crystal structures of the deformed materials were identified...
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