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An original and modern integrated current sensor is designed and presented in this paper. It can provide a sense current proportional to an output current available to the microcontroller via an external resistor. The ratio between output and sense current is modeled and simulated. The errors between the two currents increase in low currents domain. A solution consisting in a gate back regulation...
The extreme resolution of CO2 gas molecules sensing, i.e., detection of single molecule, is reported. The suspended bilayer graphene beam is exploited in order to isolate the sensing part of the device from the substrate noise. Using the electrostatic force, the central part of the suspended beam is pulled-down to bottom metal electrode, which leads to two slanted graphene beams in suspension with...
Ternary content-addressable memory (TCAM) is used in search engines for network and big-data processing [1]–[6]. Nonvolatile TCAM (nvTCAM) was developed to reduce cell area (A), search energy (ES), and standby power beyond what can be achieved using SRAM-based TCAM (sTCAM) [1]–[2]: particularly in applications with long idle times and frequent-search-few-write operations. nvTCAMs were previously designed...
The high power and long global interconnection delay are two of the major limits for further scaling down of the process nodes in the very large scale integrated (VLSI) systems. Therefore, new technologies and computer architectures are under focused development to reduce the power consumption and interconnection delay. Magnetic tunnel junction (MTJ) nanopillar with the advantages of non-volatility,...
This paper presents an approach to realize very high value of resistance through well to source connected PMOS devices working in weak inversion. The derivations of formulas were based on the concept of EKV equation at weak inversion. Analysis has been done to correlate conductance with the biasing voltage. The developed approach has been applied to the design of high resistance circuit for Piezo-electric...
This paper describes the implementation of a low power and high performance embedded non-volatile memory macro utilizing conductive bridging random access memory (CBRAM) in a standard logic CMOS 130nm Process. A 1MBit embedded non-volatile memory (NVM) macro is presented that reduces write power per bit by more than one order of magnitude over state of art flash to less than 5pJ, while write performance...
This paper presents a simple resistance-to-time converter for remotely measuring resistance of single resistive sensors. The proposed circuit employs commercially available devices to generate the output pulse whose time interval is linearly proportional to the sensing resistance. Experimental results are given to confirm not only the good operation but also the effective lead-wire-resistance compensation...
In this work we present an experimental study of the electromechanical behavior of suspended, taut, single walled carbon nanotubes (SWCNTs). A novel top-down fabrication process was developed in order to integrate the suspended SWCNTs into silicon MEMS structures fabricated using conventional micro-machining techniques. The resonant response of suspended SWCNTs under a time-varying electric field...
A resistance deviation-to-time interval converter is presented for interfacing resistive sensors. It consists of two voltage-sources, a ramp integrator, a pair of comparator, and two logic gates. The proposed converter was designed and built on 0.35 mum CMOS process. The prototype circuit exhibits a resolution as high as 13 bits, a linearity error less than plusmn 0.1%, and environment-independent...
This paper introduces a novel current sense amplifier (CSA) in sub-32nm fully depleted (FD) double-gate (DG) silicon-on-insulator (SOI) technology with planar independent self-aligned gates. A new architecture is proposed which takes advantage of the back gate in order to improve circuit properties. Compared to the reference circuit, the new architecture proves to be faster (21% sensing delay decrease),...
In deep submicron era, to prevent larger amount of SRAM from more frequently encountered overheating problems and react accordingly for each possible hotspots, multiple ideal run-time temperature sensors must be closely located and response rapidly to secure system reliability while maintaining core frequency. This paper presented a method to extract run-time temperature information from multiple...
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