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In this paper, the use of body biasing to control gain, linearity, and noise figure in CMOS low-noise amplifiers (LNAs) is investigated. As a proof of concept, a 60-GHz 4-stage cascode CMOS variable-gain LNA is designed and laid out in a 6 5nm CMOS technology. To improve the accuracy of the post-layout simulations, all inductors are modeled and simulated with a 3-dimentional electromagnetic solver...
An LNA with integrated Q-enhanced notch filter for use in FDD transceiver systems has been demonstrated. The amplifier core is coil less, made possible by the use of capacitive shunt-series feedback to simplify matching. Additionally, a Q-enhanced notch filter is integrated which attenuates TX blockers thus making an external interstage SAW filter redundant. A prototype was produced on a 65 nm CMOS...
This paper presents the design of a fully integrated inductorless wideband RF front-end for wireless applications including WLAN, Bluetooth and UWB. The core of the circuit is comprised of a two stage LNA, followed by a standard Gilbert cell mixer and an output buffer for measurement purposes. The chip was fabricated in 65 nm standard CMOS process. The RX offers an input matching of better than -10...
This paper proposes to merge an I/Q current-commutating mixer with a noise-canceling balun-LNA. To realize a high bandwidth, the real part of the impedance of all RF nodes is kept low, and the voltage gain is not created at RF but in baseband where capacitive loading is no problem. Thus a high RF bandwidth is achieved without using inductors for bandwidth extension. By using an I/Q mixer with 25%...
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