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DC and high-frequency device characteristics of In0.7Ga0.3As and InSb quantum-well field-effect transistors (QWFETs) are measured and benchmarked against state-of- the-art strained silicon (Si) nMOSFET devices, all measured on the same test bench. Saturation current (Ion) gam of 20% is observed in the In0.7Ga0.3As QWFET over the strained Si nMOSFET at (Vg - Vt) = 0.3 V, Vds = 0.5 V, and matched Ioff...
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