The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The influence on solar-cell properties of thermal annealing polycrystalline silicon wafers is presented. Electrical performance and quantum efficiency measurements revealed that cells produced from wafers which received a 1-h anneal at 700 degrees C with an aluminum-doped back side exhibit a bulk diffusion length enhancement of 15% over nonannealed cells. A 5% bulk diffusion length improvement was...
The authors present a framework for modeling anomalous diffusion during postimplant rapid thermal annealing. The model combines a detailed Monte Carlo calculation of the buildup of damage to the silicon substrate during the implant with a new kinetic model for impurity and defect diffusion. The formulation also predicts the experimentally observed decay of the anomalous diffusion. The model shows...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.