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In this paper, SCR self-supplied gate driver (SSGD) technology used in auto-passing neutral section system is discussed. This technology eliminates the need for an isolated power supply board or auxiliary power supply, with substantial savings in cost and space in medium and high voltage applications. This paper describes the principle and design of SSGD and pulse amplifier, which are two key parts...
This paper deals with the leakage current variation occurring in Al/HfYOx/GaAs capacitors subjected to constant electrical stress. It is shown that the current-time characteristic of such structures follows a power-law logistic model that arises from an extension of the Curie-von Schweidler law. The proposed model is based on an equivalent electrical circuit representation of the degraded structure...
In ultra-scaled technologies, the absence of suitable models for the MOSFET aging mechanisms leads to a lack of understanding of their real impact on the circuit performance and reliability. In this work, models for two of the main reliability issues at device level, bias temperature instability (BTI) and time dependent dielectric breakdown (TDDB), are presented. The models cover important properties...
Many charge pump structures that overcome gate-oxide overstress have been proposed in the last few years. Though they differ in the number of phases and in efficiency, they have almost the same current driver capability. A new charge pump without gate-oxide overstress, with a better current driver capability is proposed here. The new circuit is derived from a two-phase charge pump in order to inherit...
In the last years the gate-oxide overstress has become a great concern for CMOS circuits and even more so for circuits such as charge pumps. A new charge pump circuit that overcomes the gate-oxide overstress problem and has improved efficiency is proposed in this work. Simulations have shown that for 1??A current load a four-stage structure of proposed circuit reaches efficiency of about 64%, what...
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