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The implementation of complex functionality in low-power nano-CMOS technologies leads to enhance susceptibility to parametric disturbances (environmental, and operation-dependent). The purpose of this paper is to present recent improvements on a methodology to exploit power-supply voltage and temperature variations in order to produce fault-tolerant structural solutions. First, the proposed methodology...
Timing-error detection and recovery circuits are implemented in a 65 nm resilient circuit test-chip to eliminate the clock frequency guardband from dynamic supply voltage (VCC) and temperature variations as well as to exploit path-activation probabilities for maximizing throughput. Two error-detection sequential (EDS) circuits are introduced to preserve the timing-error detection capability of previous...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
An intensity modulated fiber-optic position sensor, based on a fiber to bundle coupling and a readout system using a CMOS image camera together with fast routines for position extraction and calibration, is experimentally demonstrated. Further, a simulation of the complete sensor system setup is made, and possible sources of error are analyzed experimentally. Our analysis indicates the theoretical...
Sublinear signal propagation delay in VLSI circuits carries a far greater penalty in wire area than is commonly realized. Therefore, the global complexity of VLSI circuits is more layout dependent than previously thought. This effect will be truly pronounced in the emerging wafer scale integration technology. We establish lower bounds on the trade-off between sublinear signalling speed and layout...
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