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In this work, the study of photoluminescence (PL) and Raman spectroscopy of porous silicon nanostructures (NPSi) have been carried out. The samples were prepared by photoelectrochemical anodization method using p-type silicon wafer based. Photoluminescence measurement of NPSi shows increase of PL intensity and blue shift with increasing of etching time. The varies etching time from 20 min to 40 min...
In this work a very low cost and conventional technique was used to prepare Ge nano/microstructures by means of filling the material inside porous silicon (PS) using thermal evaporator. PS was prepared by anodization of Si wafer in ethanoic hydrofluoric acid (HF).The Ge layer was deposited onto the PS by thermal evaporation.Subsequent annealing at 650°C and 750 C for 30 mins were done to drive in...
In this paper, we report an experimental study on electrochemical anodization using different acidic electrolytes of high purity Ti thin film deposited on silicon substrate by sputtering. The dependence of pore morphology and pore formation rate on process parameters was evaluated. In order to investigate the crystallization, after anodization, samples were annealed in a quartz tube furnace at different...
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