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We propose an extension and improvement to reliability predictions in epitaxially grown 3C-SiC cantilever beam MEMS by utilizing dynamic Raman spectroscopy to allow the gathering of Weibull fracture test data to be done directly on devices thereby taking account of actual geometrical tolerances, dynamic load conditions and effects from the microfabrication process due to high lattice and thermal mismatch...
This paper reports on the use of Raman spectroscopy to characterize the motion of high frequency MEMS/NEMS. The change in Raman signal from a device driven into resonance at 101 KHz was used to indicate the mode shape at that frequency and the strain induced during the oscillation. The results are in good agreement with a finite element model of the structure. The results were also used to predict...
A dynamic-stress analysis method, based on time-resolved micro Raman spectroscopy, has been developed for reliability studies of microelectromechanical systems. This novel technique is illustrated by measuring temporally and spatially resolved stress maps of a piezoelectrically actuated silicon microcantilever when driven at its first- (6.094 kHz) and second-order (37.89 kHz) resonant frequencies...
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