The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper aims at reliability assessment of power semiconductor in hybrid DC switch. Design considerations of reliability issues are explained. Specific focus is given to a temperature-based condition monitoring technique via thermo-sensitive electrical parameters. VCE, td(off), and dVCE/dt of IGBT are presented as the indicator of junction temperature and calibrated. Comparative experiments with...
Compared with the silicon semiconductors, silicon carbide (SiC) metal-oxide-semiconductor Field-Efïect transistor (MOSFET) can operate at higher switching frequency and higher temperature, which makes the junction temperature estimation more significant and challenging. In this paper, different thermo- sensitive electrical parameters (TSEPs) are investigated about their potential to measure the junction...
Compared with single-side cooling inverter, double-side cooling inverter is more advantageous for the application of electric vehicle in terms of efficient cooling performance, mechanical robustness and high power density. IGBT short-circuit fault is one of the detrimental factors to cause the whole inverter failure. From the perspective of inverter, this paper analyzed the fault condition of single...
This paper presents a junction temperature estimation model for space vector modulated IGBT inverter system for a real time implementation. Advances in power electronics, control systems, motor drives, and electrical machines helped in developing new technologies of Variable speed constant frequency (VSCF) system for more aircraft application. It is estimated that about 21% of the faults in the variable...
The pulsed power supply provides single or repeated frequency pulse energy for the load and needs the high-power switches to realize the control function. For the advantages of high reliability and small resistance, the semiconductor switch has been widely used in the pulsed power systems. The through-flow capability is an important technical parameter of the semiconductor switch, and is also the...
This letter presents the design, prototype development, operation, and testing of an 800 kHz, 1 kW, 800 V output boost dc–dc converter module that integrates SiC MOSFET and SiC Schottky diode die. It is observed that when the device loss is dominated by switching loss, the steady-state junction temperature of SiC MOSFET can reach as high as 320 °C. This is the highest self-heated junction temperature...
This paper presents experimental analysis of the voltage sharing in series connected IGCTs (Integrated Gate Commutated Thyristors) and their associated freewheeling diodes. Voltage sharing is evaluated in function of three interesting parameters: junction temperatures, gate units delay and switch off currents during switch off transients. Voltage unbalance can be improved by keeping time delay difference...
The Active NPC VSC (3L-ANPC-VSC) features a higher degree of controllability than standard NPC converters, allowing a better temperature distribution among the semiconductors. With the aid of a Predictive Control strategy, a new temperature balancing method for the 3L-ANPC-VSC is introduced. The algorithm is implemented in Matlab and compared with the 3L-NPC-VSC using experimental data of 4.5kV Press-pack...
We report in this paper on the improvement of the model presented in [1] for AlGaN/GaN HEMT especially focused on switch applications. We developed a new method to measure accurately the ON resistance Ron versus the junction temperature, and will compare here our thermal model to the measurements realized in pulsed I(V) and in [S]-parameters. We also focused on the influence of drain and gate impedances...
With SiC, junction temperatures of power semiconductors of more than 700?C are theoretically possible due to the low intrinsic charge carrier concentration of SiC. Hence, a lot of research on package configurations for power semiconductor operation above 175?C is currently carried out, especially within the automotive industry due to the possible high ambient temperatures occurring in hybrid electric...
Silicon Carbide (SiC) power semiconductors being actually in development are promising devices for the future. To outline their characteristics the switching and conducting performance of a SiC-JFET and a SiC-BJT are investigated and compared to a state of the art Si-IGBT. The power losses, the switching times and the efforts for the driving circuits are investigated. The focus is put on the influence...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.