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In this paper, we propose a novel concept for a semiconductor planar detector. At room temperature, the diode exhibits markedly high responsivity and strong spectral dependence of it: the responsivity value around 2000 V/W is inherent in K?? microwave frequency range, and while going up to frequency range D, it decreases by about two orders. Rectification of microwave currents and intervalley electromotive...
In this work we investigate indium dose dependence of optical properties of quantum dot fabricated by droplet epitaxy. Photoluminescence measurements demonstrate red shift to 1.3 mum and considerable change of a dot spectra form with peak number increase. The Gaussians decomposition analysis revealed some characteristic peak widths corresponded to different QD groups. One width is close to Stranski-Krastanov...
In this paper spectral response measurements at low intensity and low - high cell temperature ranging from -160??C (113 K) and +197??C (470 K) on a monolithic lattice-matched triple junction GaAs solar cell are presented. Apart from the present SR measurement set-up utilized at SPASOLAB for ambient cell temperature, a cryostat chamber has been built up to set the temperature of the testing cell device...
Most of high performance III-V compound semiconductor devices are fabricated utilizing heterostructures. However, when the heterostructures are grown by OMVPE, a compositional grading arises at a hetero-interfaces. The compositional grading may deteriorate the performance of the compound semiconductor devices. We have investigated the degree of the compositional grading at the interfaces using X-ray...
This work reports the wide temperature range operation of 1310 and 1490 nm DFB lasers composed of InGaAsP/InP buried heterostructures. Ultrawide temperature range single mode operation has been demonstrated in 1310 nm DFB lasers covering -70deg to +110degC and 1490 nm lasers covering -45deg to +125degC. The lasers show other excellent performances such as high optical power, high modulation frequency,...
We have measured the magnetoresistance of two-dimensional electron gas in modulation-doped In0.53Ga0.47As/InP heterostructures in the temperature range from 40 mK to 4.2 K. In magnetic fields less than about 1 T and before the onset of Shubnikov-de Haas oscillations a large negative magnetoresistance was observed, which followed a quadratic dependence on the magnetic field. The observed negative magnetoresistance...
We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.
This paper presents low frequency noise (LF) measurements on InP/GaAsSb/InP HBTs. The spectral analysis of the dominant base noise source SIb has allowed to identify the 1/f noise and a RTS noise component. From LF noise measurements as a function of the temperature, the parameters of the traps responsible for the RTS noise signature have been extracted. An activation energy close to 200 eV with a...
We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for device applications. We have fabricated and characterised a variety of axial and radial heterostructures...
Record external quantum efficiency (99%) is obtained for a GaAs/InGaP heterostructure bonded to a dome lens at 100 K. This was measured using a differential luminescence thermometry technique with temperature resolution ~ 30 muK.
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