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The effects of distributed power device model optimization and extraction techniques are incorporated to predict the fT, fmax, transducer power gain and output power in 130 nm CMOS. Small signal and large signal of BSEVI-RF model, ICF-D1 model, and measured power device results are compared for model verification.
An n-channel In0.65Ga0.35As LDMOS with Al2O3 as gate dielectric is proposed. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using two-dimensional device simulation. Comparison between In0.65Ga0.35As Si devices is made. The InGaAs LDMOS shows a 92% improvement in Ron ?? Qg over its silicon counterpart.
Power MOSFETs are important devices in many instruments. Considering the main parasitic parameters, the Cdv/dt induced effects of power MOSFETs driving circuits are analyzed. These effects will deteriorate the performance of instruments. The switching operation process is discussed firstly. And then an analytical model is deduced, based on which the characteristics of Cdv/dt induced effects are simulated...
Silicon carbide (SiC), with its high critical electric field property and the capability of operation at high temperature, has attracted much attention and shown to be a promising semiconductor material for high power devices. Some of the most widely used devices in power circuits are the JFETs and the MOSFETs. Based on characterization of high voltage 4H-SiC JFET and MOSFET, this work compares the...
This paper describes a method to identify and assess power loss mechanisms in power MOSFETs for switched circuits. An accurate behavioural MOSFET model is employed in a circuit simulator to analyse the performance of a trench MOSFET technology. A synchronous buck converter for point of load (PoL) applications underlies the study of MOSFETs' switching behaviour. The methodology aims at the derivation...
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