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This paper presents an investigation into the effects of the gate drive resistance on the losses of the MOSFET-snubber-diode (MSD) configuration commonly found in a power converter. An analytical loss model that takes the circuit stray inductances, MOSFET parasitic capacitances, and reverse-recovery characteristic of the freewheeling diode into consideration is derived to describe the interaction...
This paper describes a method to identify and assess power loss mechanisms in power MOSFETs for switched circuits. An accurate behavioural MOSFET model is employed in a circuit simulator to analyse the performance of a trench MOSFET technology. A synchronous buck converter for point of load (PoL) applications underlies the study of MOSFETs' switching behaviour. The methodology aims at the derivation...
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