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With their intrinsic superiorities such as high breakdown electric field and high thermal conductivity, SiC MOSFETs are replacing Si IGBTs in power electronics applications. However, at higher voltages SiC MOSFETs are at early stage of development and are not commercialized yet. For the first time, this paper presents thorough static and dynamic performance characterization of 3.3 kV and 30 A discrete...
This paper presents a method to optimize power MOSFETs for low power motor drive applications, particularly white appliances such as refrigerators and fans. For this, three essential factors are needed, which are a threshold voltage, capacitances, and body diode reverse recovery characteristics. These three factors must be controlled for reliability, stability and effective operation. Their optimization...
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