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This paper is focused on the design and optimization of power LDMOS transistors (VBR ≫ 120 Volts) with the purpose of being integrated in a new generation of Smart Power technology based upon a 0.18 µm SOI-CMOS technology. The benefits of applying the shallow trench isolation (STI) concept along with the 3D RESURF concept in the LDMOS drift region is analyzed in terms of the main static (Ron-sp/VBR...
Silicon carbide (SiC), with its high critical electric field property and the capability of operation at high temperature, has attracted much attention and shown to be a promising semiconductor material for high power devices. Some of the most widely used devices in power circuits are the JFETs and the MOSFETs. Based on characterization of high voltage 4H-SiC JFET and MOSFET, this work compares the...
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