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This letter reports a simple processing method for fabricating metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) by using hydrogen peroxide oxidation technique. Aluminum oxide was formed on the surface of the AlGaN barrier as the gate dielectric of the MOS-gate structure. By using the capacitance–voltage measurement, the dielectric...
Pseudomorphic high electron-mobility transistors (pHEMTs) have demonstrated excellent high-speed, power and noise performance, and have been widely used in microwave and millimeter-wave circuits, as well as wireless and optoelectronic applications. Replacing the Schottky gate contacts in pHEMTs with insulating metal-oxide-semiconductor structures (pMOSFETs) can result in increased allowable gate voltage...
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