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We have fabricated 30 nm In0.7Ga0.3As Inverted-Type HEMTs with outstanding logic performance, scalability and high frequency characteristics. The motivation for this work is the demonstration of reduced gate leakage current in the Inverted HEMT structure. The fabricated devices show excellent Lg scalability down to 30 nm. Lg = 30 nm devices have been fabricated with exhibit gm = 1.27 mS/??m, S = 83...
The performance of implant-free (IF), n-type III-V MOSFETs with an In0.75Ga0.25As channel have been evaluated using a 2D finite-element Monte Carlo device simulator. We investigate the device performance of a set of scaled transistors with gate lengths of 30, 20 and 15 nm at a drain bias of 0.5 V to determine whether this novel architecture can deliver high drain current at low bias conditions required...
80nm InAs/In0.7Ga0.3As HEMTs using Pt gate sinking were characterized for ultra-low power low noise applications. While the epitaxial structure of the device was optimized, the reduction of gate-to-channel distance was achieved from gate sinking process. The device exhibited very high drain current density of 1066 mA/mm and maximum gm of 1900 mS/mm at Vds = 0.5 V. Excellent fT (fmax) up to 113 GHz...
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