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GaN heterojunction field-effect transistors (HFETs) in the 600-V class are relatively new in commercial power electronics. The GaN Systems GS66508 is the first commercially available 650-V enhancement-mode device. Static and dynamic testing has been performed across the full current, voltage, and temperature range to enable GaN-based converter design using this new device. A curve tracer was used...
GaN high electron mobility transistors (HEMTs) are well suited for high-frequency operation due to their lower on resistance and device capacitance compared with traditional silicon devices. When grown on silicon carbide, GaN HEMTs can also achieve very high power density due to the enhanced power handling capabilities of the substrate. As a result, GaN-on-SiC HEMTs are increasingly popular in radio-frequency...
Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power switching applications having weight and volume constraints, while simultaneously needing a high overall efficiency. With its projected 100x performance advantage over silicon, GaN is a game changing technology for energy-efficient power electronics. This paper reviews the advantages of GaN material and devices, the...
This study reports, for the first time, AlGaAs/InGaAs/AlGaAs high-electron mobility transistors (HEMTs) devices and single-pole-single-throw (SPST) switches with utilizing n+-type doping on etching stop AlAs layer (M-HEMTs) designs were fabricated and investigated. We doping on etching stop AlAs layer to reduce parasitic resistances and enhance device DC and RF power performance. These modified M-HEMTs(HEMTs)...
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