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Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
Ion-beam assisted glancing-angle deposition is used to fabricate relative humidity sensors. Ion currents of 3,5, and 7 mA were tested. The morphology and capacitance of the sensors are found to be dependent on the ion current density. The capacitance increases with increasing ion current, especially for the 7 mA case which exhibits a capacitance approximately one order of magnitude greater than a...
In this paper, the processes associated with the electrodeposition of Selenium on Au substrates from nitric acidic solutions were investigated by combined electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV) measurements. The analyses reveal that H2SeO3 in the solution is firstly adsorbed on the surface of Au electrode during cathodic polarization and subsequently reduced to Se...
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