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We report the development of a novel 3-terminal single element piezoresistor for ultra-miniature pressure sensor applications and compare its performance to that of a traditional half Wheatstone bridge design. The pressure sensors reported here are 0.69-French in size (1F= 333 mum) and are designed and batch-fabricated using SOI (silicon on insulator) and DRIE (deep reactive ion etching) technologies...
Design and characterization of a new generation of single-photon avalanche diodes (SPAD) array, manufactured by ST-Microelectronics in Catania, Italy, are presented. Device performances, investigated in several experimental conditions and here reported, demonstrate their suitability in many applications. SPADs are thin p-n junctions operating above the breakdown condition in Geiger mode at low voltage...
In this paper, the layered structure ZnO/Quartz (90deg rotated ST-cut) is investigated theoretically and experimentally. Both waves, Rayleigh and Love, are analyzed. Dispersion curves of phase velocities, electromechanical coupling coefficient (K2) and temperature coefficient of frequency (TCF) were calculated as a function of normalized thickness ZnO film (khZnO = 2pihZnO /lambda) and the optimum...
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