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This paper presents the results of extensive simulations on the characterization of asymmetrical channel device, namely Dual material Gate Fully Depleted Silicon On Insulator (DMG-FD-SOI) in the sub-100nm dimensions with emphasis on the analog, radio frequency (RF) performances and short channel effects (SCEs). The obtained results may serve as useful guidelines to get a basis overview of this gate-material...
This work presents the design, manufacturing and packaging of a novel K-band 5-bit MEMS phase shifter for applications in Satellite COTM (Communication On The Move) Terminals. The first 4 bits are realized by using a switched line topology whereas the less significant bit consists of a loaded line section. The device has been manufactured in microstrip technology on high resistivity silicon substrate...
The silicon vertical MOSFET RF power amplifier described in this paper is the industry's first to utilize high voltage vertical technology. Operating under pulse conditions of 200 musec pulse width and 10% duty cycle it delivers more than 100 W of peak power. Operating in Class AB with only 50 mA of bias current the device achieves more than 20 dB of gain and 47% power added efficiency at P 1 dB compression...
Performance issues in S-Band and X-Band radar applications, have been investigated in parallel paths. The first approach continued with the basic GaAs based MESFET and pHEMT devices with the addition of field plate structures to enhance the transistor source-to-drain breakdown, enabling operation at higher voltages and producing significant improvements in device operation. The second direction questioned...
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