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Despite fatigue failure in polysilicon microstructures has been reported by many research groups, its origin is still contentious. In this paper it is presented a systematic fatigue analysis on suitably designed polysilicon microstructures including a 15 ??m thick notched specimen with a radius of curvature of 0.5 ??m. Different fatigue tests are performed as a function of the applied stress. During...
The silicon pillar thickness effect on vertical double gate MOSFET (VDGM) fabricated by implementing oblique rotating ion implantation (ORI) method is investigated. For this purpose, several silicon pillar thicknesses tsi were simulated. The source region was found to merge at tsi < 57 nm, forming floating body effect. The electron-hole concentration along the channel and the depletion isolation...
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