The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A controllable and selective process for doping is essential for current CMOS technology, and with the advent of FinFETs, necessity for conformal doping has become inevitable. In this work, we demonstrate formation of novel phosphorus porphyrin self-assembled monolayers(SAMs) on silicon substrate to dope silicon with phosphorus (n-type doping). Detailed physical characterization of SAMs formed on...
This work presents an analytical continuous compact model for FinFETs which is based on the doped Symmetrical Double Gate model. Our model covers a wide range of technological parameters including different doping concentrations from 1×1014 to 3×1018 cm−3, short channel effects (down to 80 nm) and high temperatures (up to 200°C). Recently, we have also implemented and validated it in a Verilog-A module...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.