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A FinFET doping method with PSG/BSG glass mimic doping was presented and a simplified process flow was introduced. Numerical simulation and experiment results of sheet resistance and SIMS profiles indicated a uniform doping of the 3D FinFET structure with the presented method, by using a proper dielectric layer and conducting an optimized subsequent annealing process.
This paper presents a method of suppressing kink effects which originate in the corners of triple-gate bulk FinFETs. We propose corner implantation to turn off the parasitic corner device which has lower threshold voltage than the bulk device. This method is investigated in triple-gate bulk FinFETs by 3D numerical simulations. Threshold voltage shift of 0.434 V with a decrease in on-state current...
In this paper, the effect of channel implantation dose and energy has been studied for the design of nanoscale FinFET devices for high frequency application. It was observed that the threshold voltage of the device may be increased through both implantation dose and energy but the later is preferable because of less carrier scattering. The drain current and the peak cut-off frequency of the device...
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