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This paper reports the fabrication and photovoltaic (PV) demonstration of macro-length, micron-diameter hairlike solar cells. In this design of cylindrical silicon solar cell with a radial p-n architecture, the carbon fiber (CF) serves as the core electrode as well as fabrication substrate, and polysilicon (poly-Si) is used as the shell photoactive material. Uniform deposition of poly-Si on the cylindrical-shape...
Photoresponse of nitrogen and phosphorous doped n-C/p-Si heterostructure have been studied. Camphor (C10H16O) was used as starting precursor material in both cases. Phosphorous was doped in varying amounts (1%-7% by mass) and Nitrogen was doped in gas phase with varying partial pressure in the range from 0.3 to 50 mTorr. The doped carbon films were deposited on Silicon substrates by pulsed laser deposition...
We have successfully reduced threshold voltage variation by combination of co-implantation and laser spike anneal on 45 nm low power SoC platform with conventional poly-Si/SiON gate stack. Doping profiles of CMOSFET channel is modulated through co-implantation of diffusion suppressor. We have explored the possibility of cluster carbon doping in order to minimize junction leakage degradation. Systematic...
Si:C layers under non-doped-Si epitaxial channel (Epi-channel) produces steep channel profile for 25 nm-LG nMOSFET. Si:C layers work as the dopant-diffusion-barriers from the boron doped regions. Moreover, retrograde Halo profiles are also realized in this structure. Steep channel profiles at scaled device are confirmed, and the benefits of its profile at LG of 25 nm are discussed.
Carbon films are deposited by pulsed laser deposition technique in nitrogen (N) environment. Camphor, a natural source is used as a starting precursor for the carbonaceous film. The optoelectronic properties indicate successful doping for the film deposited at low nitrogen content. Photovoltaic characteristics of N incorporated carbon on silicon structure is investigated. The J-V characteristic of...
Photovoltaic cells based on boron-doped p-type amorphous carbon on n-Si have been synthesized by rf plasma-enhanced CVD using trimethylboron (TMB). In order to identify the optimal doping condition, various TMB/CH/sub 4/ flow ratios have been investigated. A p-type a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.007 % have been fabricated. The spectral response of cell...
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