The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In order to get high output power to load, a methodology called load-pull and source-pull is often utilized to select the optimal input and output impedance. Based on the methodology, using the GaN HEMT CGHV1F006S from CREE, simulation is performed by using microwave simulation software ADS. The results indicate that within 8.5GHz–10.2GHz, Delivered Power is higher than 37 dBm with Gain Ripple being...
This paper expounds on the design of Doherty power amplifier. The principle of Doherty power amplifier is analyzed detailedly. We also introduce the procedure of designing matching networks. A Doherty power amplifier at band 2.11–2.17GHz is simulated with the MRF8S21120H transistor. The P1dB is above 52dBm, and its efficiency is above 41% in 6dB back-off region. It demonstrates an efficiency improvement...
In this paper, we describe the design of a high power amplifier at Ka band. To achieve the output power of more than 30dBm, at first we design a one-stage power amplifier, and then design a two-stage amplifier circuit through the directional coupler, and ultimately achieve 31dBm of output power. The design is based on GaN materials to build a physical model of the HEMT. The S-parameters are extracted...
In this paper, we perform a simultaneous low- and high-frequency characterization of a microwave power amplifier (PA) circuit under dynamic biasing conditions. Particular attention is paid to the drain bias port characterization and the effects of the dynamic biasing on the radio-frequency (RF) behavior of the PA under test. Experimental results are obtained in order to evaluate the long-term memory...
This paper proposes a novel and easily-implemented method for Class-J power amplifiers. The 2nd harmonic impedance matching networking is designed and realized by using microstrip stub networks. To prove the concept, a PA prototype operating at the frequency range from 1.7 GHz to 2.24 GHz is implemented. In the field experimental results, it achieves the drain efficiency of above 62% at a fractional...
In this paper two-way Doherty amplifier with the additional circuit for linearization has been realized and measurements of the linearization influence to the third - and fifth-order intermodulation products have been carried out. The linearization approach uses the fundamental signals' second harmonics and fourth-order nonlinear signals that are extracted at the output of the peaking cell, adjusted...
A mathematical approach for determining the maximal applicable gain of amplifiers, that are used in two recently introduced methods for measurement of extreme input impedances using a common vector network analyzer (VNA) - the generalized method and the direct method - is presented. These two measurement methods exhibit outstanding measurement sensitivity for extreme impedance values - impedances...
Doherty introduced two types of concepts for high-efficiency amplifiers in 1936. One involved a shunt connected load and the other involved a series connected load. The first one is well known. We propose a microwave Doherty power amplifier with a series connected load using baluns. A 1.9 GHz GaN HEMT Doherty power amplifier was designed and fabricated. At 24 dBm middle and 31 dBm saturated output...
In this paper, the symbolic formulas for AC power signal gain, input and output impedance of fully differential single stage common-source microwave power amplifier based on LDMOS large signal model are derived for the first time. The model can be verified by comparing with HSPICE simulation results as well as comparing with experimental results.
In this paper, a 6W uneven LDMOS Doherty power amplifier (DPA), designed for GSM900 base stations, which implement phased antenna array transmission, is presented. The designed Doherty PA can deliver a maximum power of 6.5W. A high drain efficiency of eta=64% (PAE=58%) is measured. The efficiency is maintained above eta=43% (PAE=37%), over 6-dB output backoff, and above eta=31% (PAE=29%), over 9-dB...
An efficiency optimized controlling scheme for dynamic load modulation (DLM) of power amplifiers (PAs) is proposed. In this scheme, both the input signal and load impedance are controlled to allow high efficiency operation of PAs for a desired output signal modulation. The proposed technique is demonstrated by two 1 GHz, LDMOS, switched mode power amplifiers (SMPAs) which are characterized by varying...
This paper presents a new low-complexity transmission-line load transformation network topology suitable to synthesis class-E impedance termination with a minimum of circuit elements. Only one additional stub, besides the quarter wavelength drain bias stub, is used to control simultaneously fundamental, second and third harmonic frequency impedance termination. In this way, loss in the load coupling...
In this paper, the design of a compact planar bandpass filter above a defected ground plane is presented. The filter is designed as a combination of microstrip resonators and exploits the properties of a planar electromagnetic bandgap (EBG) structure patterned unto the ground plane of the printed circuit board material to provide a very wide stopband of up to 5 times the fundamental frequency. The...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.