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A wideband Gallium Nitride (GaN) HEMT power amplifier (PA) achieving 7.6W output power over 1.1 GHz bandwidth at fo = 2.75 GHz is presented. A systematic design and synthesis of wideband low-pass matching networks realizing optimal fundamental impedance is applied. These techniques have produced amplifiers with increased output power, efficiency and very large fractional bandwidth. Additionally, the...
In order to get high output power to load, a methodology called load-pull and source-pull is often utilized to select the optimal input and output impedance. Based on the methodology, using the GaN HEMT CGHV1F006S from CREE, simulation is performed by using microwave simulation software ADS. The results indicate that within 8.5GHz–10.2GHz, Delivered Power is higher than 37 dBm with Gain Ripple being...
This paper shows practical output load impedance sensitivity of a 10 W GaN HEMT device depending on a gate bias. In order to determine how much the output impedance changes for different biasing points, Load Pull measurement is performed for different biasing points from deep class-AB to class-A. It has been found that load impedances for simultaneously high output power as well as high power added...
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