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This paper presents a fully integrated V-band two stage power amplifier with cascode topology. The PA is designed on 0.25 ??m SiGe:C BiCMOS technology. The technology provides ft and fmax ?? 200 GHz. The two stage PA provides a gain of 17 dB at 64 GHz. The PA has been optimized for biasing circuit, PA Core and the matching networks. This has resulted in high power and high linearity from 58 GHz to...
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