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Latching RF MEMS Switches of Single-Pole-Single-Throw (SPST), Single-Pole-Double-Throw (SPDT) and Single-Pole-Triple-Throw (SP3T) types are proposed. The switches are built of a 20 thick nickel layer covered with a plated 2 gold on the top and side walls of nickel layer eliminating any potential warping due to thermal mismatch. The switches are actuated using a high stroke latching...
A type N coaxial load for the RF calorimeter is proposed in this paper. Some key technology is researched such as load resistance and tractrix outer-conductor. In order to get a calorimeter-load of high stability, the thermal simulation and analysis are conducted. The test results validate not only the matched performance of the load is excellent, but also the responses of RF power and DC power are...
Planar Gunn diodes have been scaled vertically through combining multiple active epilayer stacks present in previously successful GaAs/AlGaAs devices. Comparison of results from fabricated devices with those simulated using a Monte Carlo approach suggest that while current and power output rises in such scaled designs, this is limited by significant heating which results in sub-linear scaling with...
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