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We demonstrate λ ~ 9 μm GaAs/Al0.45Ga0.55As quantum cascade lasers (QCLs) operating up to 320 K. Metal- organic vapor phase epitaxy has been used throughout for the growth of the devices. Detailed comparison has been carried out for the QCLs with various waveguides and grown on (100) GaAs substrates with different miscut angles towards (111)A. Introduction of InGaP cladding layers into the optical...
GaInAsSb/AlGaAsSb injection lasers have been fabricated with increased Al concentration in the cladding layers. As a result of improved optical and electrical confinement, the threshold current density Jth for these double heterostructures was a factor of two lower than reported previously; CW operation was achieved up to 235 K.
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