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We report device performance investigation of 4H-SiC avalanche photodiodes (APDs) with or without absorbing AlGaN cap layers, as 4H-SiCspsila potential use in single photon counter APDs have drawn interest. Wide bandgap 4H-SiC photodiodes have low dark current levels at high temperatures and under intense radiation compared to silicon, and the 4H-SiC APDs are ldquosolar blindrdquo - transparent to...
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