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We fabricated a backside-illuminated high-current InGaAs/InP photodiode, and demonstrated an RF power of 25.8 dBm at 5 GHz. The third-order intercept point was 34.2 dBm at the photocurrent of 100 mA, 5.2 GHz.
Extremely compact resistive-feedback CMOS low-noise amplifiers (LNAs) are presented as a cost-effective alternative to multiple narrowband LNAs using high-Q inductors for multiband wireless applications. Limited linearity and high power consumption of the inductorless resistive-feedback LNAs are analyzed and circuit techniques are proposed to solve these issues. A 12-mW resistive-feedback LNA, based...
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