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We have studied the molecular beam epitaxial growth and characteristics of p-doped InAs tunnel injection quantum-dash lasers on InP (001) substrates. Significantly improved photoluminescence intensity and narrow linewidth (~50 meV) are measured from stacked InAs quantum-dash layers with optimized growth conditions. The lasers exhibit very large T0 (204 K) and large modulation bandwidth (f-3 dB=12...
We have investigated the molecular beam epitaxial growth and characteristics of p-doped InAs tunnel injection quantum dash lasers on InP (001) substrates. Significantly improved photoluminescence intensity and narrow linewidth (~ 50 meV) are measured from multiple InAs quantum dash layers grown under optimized conditions. The lasers are characterized by very large T0 (204 K), large modulation bandwidth...
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