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This paper reports a 0.18 /spl mu/m Ti-salicided p-MOSFET with shallow junctions fabricated by rapid thermal processing (RTP) in an NH/sub 3/ ambient and low energy boron implantation. It is found that the nitrogen atoms induced by the RTP in an NH/sub 3/ ambient diffuse into the substrate in source/drain regions and suppress the diffusion of boron ions. This new process allows the improved short...
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