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An InGaAs/InP single-photon avalanche photodiode (SPAD) with a high differential gain was achieved by changing the multiplication region thickness and the sheet charge density of the charge layer. A gain of more than 100 was obtained. The DCR is less than 1k with the frequency up to 250 kHz.
In this paper, the effects of the thickness of the multiplication region (Tm), the sheet charge density of the charge control layer (Dc) and the guard ring design to a separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode (SPAD)'s performance are numerically discussed. Optimized Tm and Dc are designed for a SPAD. Implanted guard ring is revealed to be easier...
The InAlN/GaN heterojunction is a new alternative to the common AlGaN/GaN configuration with high sheet charge density and high thermal stability, promising very high power and temperature performance as well as robustness. The status, focussing on the lattice matched materials configuration is reviewed.
Theoretical analysis and calculation of polarization, piezoelectric field and sheet charge density of InN-based heterostructures have been studied as a function of lattice mismatch induced strain. Theoretical investigation shows that polarity of the grown structure plays substantial influence on charge density and electron confinement. A high sheet charge density and strong electron confinement at...
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