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Pre-annealing of seed layers before the growth of ZnO nanorods (NRs), at various temperatures (non-annealing ~800°C) and in various atmospheres (vacuum, N 2 , or O 2 ), was systematically studied to investigate the effects of pre-annealing on the material properties of ZnO NRs as well as the rectifying behaviour of ZnO NRs/p-Si heterojunction diodes (HJDs). A seed layer was initially...
In this study, we investigated the properties of ZnO nanostructures grown by a sol-gel method on glass substrates. First, the seed layer of ZnO were formed using zinc acetate dihydrate (Zn(CH3COOH)2??2H2O), 2-propanol (CH3CH2 CH2OH), and sodium hydroxide (NaOH) as precursor material, solvent and sol stabilizer, respectively. The three dimensional ZnO nanostructures were then grown by the CBD(Chemical...
A new hexagonal-nitride material, AlN, is proposed in place of current metallic materials as a seed layer underneath the Ru layer for perpendicular recording media. It was found that (1) c-plane oriented AlN with wurtzite structure can be realized by direct current reactive sputtering, (2) c axis direction distribution (FWHM) of AlN decreases with the change in buffer structure from nano-crystalline...
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