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Demonstration of Al0.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under...
Experimental electrical characteristics at room and high temperature are presented for germanium, silicon and silicon carbide PN junction diodes. Linear voltage dependence of reverse current is exhibited for a portion of electrical characteristic if plots in linear-linear scales are considered. At higher applied voltage, deviation from the linear dependence is usually exhibited. In the case of germanium...
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