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A novel low on-resistance 600V structure with Split P-Buried Floating Layer(SBFL) and doping trench is proposed and demonstrated by simulation. This novel structure can overcome big reverse leakage current problem of conventional SBFL, and keep its low on-resistance advantage. Its specific on-resistance is 43% less than ideal parallel-plane junction stucture at 600V blocking voltage, from 73.3 mO...
The excellent detectability of the gain enhanced InGaAs/InP heterobipolar phototransistor (GE-HPT) is demonstrated and attributed to a reduction in the reverse leakage current at the base-collector junction and the enhancement of current gain at the emitter-base junction achieved by using a current blocking structure with a Zn doped mesa sidewall. The common emitter grounded current gain agrees well...
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